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ZMX40M XFHCL2 23150 C20T100 BAV16WS B1729 08017 17S100A
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  Datasheet File OCR Text:
 SMD Type
General Purpose Transistor 2SC2412K
SOT-23
Transistors IC
Unit: mm
Features
Low Cob.Cob=2.0pF (Typ.)
+0.1 2.4-0.1
+0.1 2.9-0.1 +0.1 0.4-0.1
+0.1 1.3-0.1
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 60 50 7 0.15 0.2 150 -55 to +150 Unit V V V A W
Electrical Characteristics Ta = 25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current Gain Collector-emitter saturation voltage Collector Output Capacitance Transition frequency Symbol VCBO VCEO VEBO ICBO IEBO hFE IC=50iA IC=1mA IE=50iA VCB=60V VEB=7V VCE=6V, IC=1mA 120 Testconditons Min 60 50 7 0.1 0.1 560 0.4 2 180 3.5 V pF MHz Typ Max Unit V V V A A
VCE(sat) IC/IB=50mA/5mA Cob fT VCE=12V, IE=0A, f=1MHz VCE=12V, IE=-2mA, f=100MHz
hFE Classification
Marking Rank hFE 120 BQ Q 270 180 BR R 390 270 BS S 560
+0.1 0.38-0.1
0-0.1
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SMD Type
2SC2412K
Typlcal Characteristics
Transistors IC
Fig.1 Grounded Emitter Propagation Characteristics
Fig.2 Grounded Emitter Output Characteristics
Fig.3 Grounded Emitter Output Characteristics
Fig.4 DC Current Gain vs. Collector Current
Fig.5 DC Current Gain vs. Collector Current
Fig. 6 Collector-Emitter Saturation Voltage vs. Collector Current
Fig.7 Collector-Emitter Saturation Voltage vs. Collector Current
Fig.8 Collector-Emitter Saturation Voltage vs. Collector Current
Fig.9 Gain Bandwidth Product vs. Emitter Current
2
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SMD Type
2SC2412K
Transistors IC
Fig.10 Collector Output Capacitance vs. Collector-Base Voltage Emitter Input Capacitance vs. Emitter-Base Voltage
Fig.11 Base-Collector Time Constant vs. Emitter Current
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